Semiconductor devices having hybrid capacitors and methods for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDongkyun Park, Han-Young Kim, Joon Kim, Hyun Park, Junghwan Oh, Minhee Cho
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsDongkyun Park, Han-Young Kim, Joon Kim, Hyun Park, Junghwan Oh, Minhee Cho
Estimating the term…
A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.
A semiconductor device comprising:
11-15. (canceled)
A semiconductor device comprising:
Dependencies are inferred from the claim text.