Sub-lithographic semiconductor structures with non-constant pitch
AssigneeInternational Business Machines Corporation
InventorsMarc A. Bergendahl, David V. Horak, Charles W. Koburger, III, Shom Ponoth, Chih-Chao Yang
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Abstract
Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.
Claims20
A method of forming a plurality of fins, comprising:
- forming a first set of fins having a first pitch;
- and
- forming an adjacent fin to the first set of fins, wherein the adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch,
- wherein the first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.
A method, comprising:
- forming an etch stop layer on a semiconductor material;
- forming a mandrel on the etch stop layer;
- forming sidewall spacer material on the mandrel;
- removing the mandrel;
- forming filler spacers on the sidewall spacer material;
- forming fill material between the filler spacers;
- removing the filler spacers and portions of the semiconductor material below the filler spacers to form:
- a first set of structures comprising the sidewall spacers, the etch stop layer and the semiconductor material, and
- a second set of structures comprising the fill material and the semiconductor material;
- and
- alternately forming a mask over groupings of a plurality of the first set of structures and the second set of structures, and alternating etching material from unprotected ones of the first set of structures and the second set of structures to form fin structures of the semiconductor material with a non-constant pitch.
A structure, comprising:
- a first set of fins having a first pitch;
- and
- an adjacent fin to the first set of fins, wherein the adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch,
- wherein the first set of fins and the adjacent fin are sub-lithographic features formed from semiconductor material on an oxide layer.
Dependencies are inferred from the claim text.