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US 2014/0110813 A1Published application
Absorbers for High Efficiency Thin-Film PV
AssigneeIntermolecular, Inc.
InventorsHaifan Liang, Jeroen Van Duren
Life of this patent
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Abstract
Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.
Claims18
A semiconductor material comprising:
- a first layer formed above a surface of a substrate, wherein the first layer comprises Cu, In, Ga, Ag, and at least one of S or Se.
A semiconductor material comprising:
- a first layer formed above a surface of a substrate, wherein the first layer comprises Cu, In, Ga, Al, and at least one of S or Se.
A semiconductor material comprising:
- a first layer formed above a surface of a substrate, wherein the first layer comprises Cu, In, Ga, X, and at least one of S or Se, wherein X is at least one of Na, Mg, K, or Ca, and wherein the concentration of X varies from a first interface of the first layer to a second interface of the first layer
Dependencies are inferred from the claim text.