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US 2014/0110810 A1Published application
Photodiode array
AssigneeHamamatsu Photonics K.K.
InventorsKoei YAMAMOTO, Terumasa NAGANO, Kazuhisa YAMAMURA, Kenichi SATO, Ryutaro TSUCHIYA
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Abstract
A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
Claims9
A photodiode array comprising a light receiving region, wherein the light receiving region includes a plurality of light detecting sections, and each of the light detecting sections comprises:
- a first semiconductor region of a first conductivity type,
- a second semiconductor region of a second conductivity type, the second semiconductor region forming a p-n junction with the first semiconductor region,
- a first contact electrode being in contact with the second semiconductor region,
- a second contact electrode having a material different from that of the first contact electrode, the second contact electrode being arranged at a position overlapping the first contact electrode and being in contact with the first contact electrode, and
- a resistive layer continued to the second contact electrode.
2 more elements
Dependencies are inferred from the claim text.