Solid-state imaging device and method of manufacturing solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorsRyota WATANABE, Shinji UYA
Life of this patent
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Abstract
According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and accumulates the charges. The fixed charge layer is formed on a light receiving surface side of the photoelectric conversion element, and holds negative fixed charges. The silicon nitride film is formed on a light receiving surface side of the fixed charge layer. The silicon oxide film is formed between the fixed charge layer and the silicon nitride film.
Claims20
A solid-state imaging device, comprising:
- a photoelectric conversion element that performs photoelectric conversion of converting incident light into an amount of charges corresponding to an amount of received light and accumulates the charges;
- a fixed charge layer that is formed on a light receiving surface side of the photoelectric conversion element and holds negative fixed charges;
- a silicon nitride film that is formed on a light receiving surface side of the fixed charge layer;
- and
- a silicon oxide film that is formed between the fixed charge layer and the silicon nitride film.
A method of manufacturing a solid-state imaging device, comprising:
- forming a photoelectric conversion element that performs photoelectric conversion of converting incident light into an amount of charges corresponding to an amount of received light and accumulates the charges;
- forming a fixed charge layer that holds negative fixed charges on a light receiving surface side of the photoelectric conversion element;
- forming a silicon oxide film on a light receiving surface side of the fixed charge layer;
- and
- forming a silicon nitride film on a light receiving surface side of the silicon oxide film.
Dependencies are inferred from the claim text.