US 2014/0110802 A1Published application

Memory Devices with Magnetic Random Access Memory (MRAM) Cells and Associated Structures for connecting the MRAM Cells

AssigneeCrocus Technology SA

InventorsNeal Berger, Mourad El Baraji, Amitay Levi

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Abstract

A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Claims20

Dependent claims

An improved apparatus including a magnetic layer including:

a plurality of magnetic random access memory (MRAM) cells;
a first conductive layer including a first conductive portion electrically connected to the plurality of MRAM cells, and a first field line configured to write data to at least one of the plurality of MRAM cells;
a first via;
a layer including a first strap extending from the first via to the first MRAM cell, wherein the first via extends from the first conductive portion to the first strap;
and
a second conductive layer including a first conductive interconnect extending between the first MRAM cell and the second MRAM cell;
and
wherein the improvement comprises:
a second via extending from the first conductive portion to the second conductive layer, the second via to replace the first via;
a second conductive interconnect extending from the first MRAM cell to the second via and bypassing the strap, the second conductive interconnect to replace the first conductive interconnect;
and
a second strap extending from the first MRAM cell to the second MRAM cell, the second strap to replace the first strap.

9 more elements

Dependencies are inferred from the claim text.