Electronic device and its manufacturing method

A method for manufacturing an electronic, comprising:

• forming a functional element in a first region of a substrate;
• forming a transistor in a second region of the substrate;
• forming an interlayer dielectric layer that covers the transistor and the functional element;
• forming a sidewall surrounding the functional element in the interlayer dielectric layer;
• forming a first layer that covers the interlayer dielectric layer and connects to the side wall;
• forming a dielectric layer that covers the first layer;
• removing a region of the dielectric layer inside the sidewall as viewed in a plan view;
• forming a second layer composed of one kind or an alloy or a composite nitride of two or more kinds selected from the group consisting of TiN, TaN, Ti, Ta, W, Au, Pt, Co and Ni, on the first layer and on the dielectric layer;
• forming through holes in the first layer and the second layer in the first region;
• and
• forming a cavity that contains the functional element by etching and removing the interlayer dielectric layer surrounded by the sidewall through the through holes,
• the second layer being formed with a region that is disposed outside an outline of the first layer in a plan view, and the dielectric layer being disposed below the region disposed outside the outline of the first layer in the plan view of the second layer.