Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsSung Lae OH, Sang Hyun SUNG
Life of this patent
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Abstract
A semiconductor device includes a substrate where a cell region and a contact region are defined, an isolation region and an active region disposed alternately in the contact region, transistors configured to include a gate formed over the substrate and a source and a drain formed in the active region at both sides of the gate, in the contact region, memory blocks configured to include conductive lines stacked over the substrate and formed over the transistors, the conductive lines being extended from the cell region to the contact region in the direction crossing over the isolation region and the active region, and contact plugs formed between the memory blocks in the contact region.
Claims20
A semiconductor device comprising:
- a substrate where a cell region and a contact region are defined;
- an isolation region and an active region disposed alternately in the contact region;
- transistors configured to include a gate formed over the substrate and a source and a drain formed in the active region at both sides of the gate, in the contact region;
- memory blocks configured to include conductive lines stacked over the substrate and formed over the transistors, the conductive lines being extended from the cell region to the contact region in the direction crossing over the isolation region and the active region;
- and
- contact plugs formed between the memory blocks in the contact region.
A method of manufacturing a semiconductor device, the method comprising:
- forming an isolation layer in an isolation region of a substrate where a cell region and a contact region are defined, wherein an active region and the isolation region are disposed alternately in the contact region;
- forming transistors including a gate, a source and a drain in the contact region;
- forming memory blocks including conductive lines stacked over the transistors, the conductive lines being extended from the cell region to the contact region in the direction crossing over the isolation region and the active region;
- and
- forming contact plugs disposed between the memory blocks in the contact region.
Dependencies are inferred from the claim text.