Replacement metal gate finfet
AssigneeInternational Business Machines Corporation
InventorsHemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Chun-Chen Yeh, Stefan Schmitz
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Abstract
A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.
Claims20
A field effect transistor device comprising:
- a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region;
- a hardmask layer arranged partially over the channel region of the fin;
- a gate stack arranged over the hardmask layer and over the channel region of the fin;
- a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack;
- and
- a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.
A field effect transistor device comprising:
- a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region;
- a hardmask layer arranged over the channel region of the fin;
- a gate stack including a dielectric layer arranged over the hardmask layer and over the channel region of the fin;
- a first spacer arranged adjacent to the gate stack;
- and
- a first cavity defined by the hardmask layer, the first spacer and a source region arranged adjacent to the first spacer, wherein the first cavity is filled by the dielectric layer.
A field effect transistor device comprising:
- a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region;
- a gate stack arranged over the channel region of the fin;
- a hardmask layer arranged over a first portion of the fin adjacent to the gate stack;
- a metallic alloy layer arranged on the hardmask layer arranged over the first portion of the fin adjacent to the gate stack;
- and
- a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.
Dependencies are inferred from the claim text.