High gain device
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorGuowei ZHANG
Life of this patent
Estimating the term…
Abstract
A method of forming a device is disclosed. A substrate having a high gain (HG) device region for a HG transistor is provided. A HG gate is formed on the substrate in the HG device region. The HG gate includes sidewall spacers on its sidewalls. Heavily doped regions are formed adjacent to the HG gate. Inner edges of the heavily doped regions are aligned with about outer edges of the sidewall spacers of the HG gate. The heavily doped regions serve as HG source/drain (S/D) regions of the HG gate. The HG S/D regions do not include lightly doped drain (LDD) regions or halo regions.
Claims21
A method of forming a device comprising:
- providing a substrate having a high gain (HG) device region for a HG transistor;
- forming a HG gate on the substrate in the HG device region, wherein the HG gate includes sidewall spacers on its sidewalls;
- and
- forming heavily doped regions adjacent to the HG gate, wherein an inner edge of the heavily doped regions are aligned with about outer edges of the sidewall spacers of the HG gate, the heavily doped regions serve as HG source/drain (S/D) regions of the HG gate, wherein the HG S/D regions do not include lightly doped drain (LDD) regions or halo regions.
A method of forming a device comprising:
- providing a substrate having at least a first device region for a first transistor and a second device region for a second transistor;
- forming a first gate on the first device region and a second gate on the second device region, wherein the gates include sidewall spacers on their sidewalls;
- and
- forming heavily doped regions adjacent to the gates, wherein inner edges of the heavily doped regions are aligned with about outer edges of the sidewall spacers of the gates, the heavily doped regions serve as source/drain (S/D) regions of the gates, wherein the S/D regions of the second transistor do not include lightly doped drain (LDD) regions or halo regions.
17-20. (canceled)
A method of forming a device comprising:
- providing a substrate having a core device region for a core transistor and a high gain (HG) device region for a HG transistor;
- forming a gate on the substrate in the core device region and a HG gate on the substrate in the HG device region, wherein the gate and the HG gate include sidewall spacers on their sidewalls;
- and
- forming lightly doped drain (LDD) regions only in the core device region, wherein inner edges of the LDD regions are aligned with about sidewalls of the gate.
Dependencies are inferred from the claim text.