Source Tip Optimization For High Voltage Transistor Devices

A method comprising:

• implanting dopants into a first region and a second region of a substrate;
• performing a process that diffuses the dopants into a third region of the substrate, wherein after the performing of the process, the first, second, and third regions are formed of a first dopant type;
• and
• forming a doped extension region in the first region and extending into the third region, the doped extension region being formed of a second dopant type that is opposite the first dopant type, wherein after forming the doped extension region a portion of the substrate is interposed between the first region and the third region, wherein the portion of the substrate is formed of the second dopant type, wherein the portion of the substrate is different than the doped extension region and is between a top surface of the substrate and the doped extension region.

A device comprising:

• a first doped region of a first dopant type disposed within a substrate, the first doped region having a first doping concentration level;
• a second doped region of the first dopant type within the substrate, the second doped having a second doping concentration level that is different than the first doping concentration level;
• a doped extension region disposed within the first doped region and extending into the second doped region within the substrate, the doped extension region being formed of a second dopant type that is opposite the first dopant type, and
• wherein a portion of the substrate is interposed between the first doped region and the second region, wherein the portion of the substrate is formed of the second dopant type, wherein the portion of the substrate is different than the doped extension region and is between a top surface of the substrate and the doped extension region.