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US 2014/0110777 A1Published application
Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
AssigneeUnited Microelectronics Corp.
InventorsChun-Hong PENG, Yu-Hsi LAI
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Abstract
A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.
Claims14
A trench gate metal oxide semiconductor field effect transistor, comprising:
- a substrate having a trench formed therein, wherein the trench is extended downwardly from a surface of the substrate;
- and
- a gate comprising an insertion portion and a symmetrical protrusion portion, wherein the insertion portion is embedded in the trench, and the symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.
A method for fabricating a trench gate metal oxide semiconductor field effect transistor, the method comprising steps of:
- providing a substrate;
- forming a hard mask layer on the substrate;
- performing an etching process to remove a part of the hard mask layer and forming a trench in the substrate;
- performing an etching back process to remove a part of the hard mask layer;
- forming a conductive layer on the hard mask layer, and filling the polysilicon layer into the trench;
- and
- performing a planarization process to remove the conductive layer by using the hard mask layer as a stop layer.
4 more elements
Dependencies are inferred from the claim text.