Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorDae Gyu SHIN
Life of this patent
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Abstract
A semiconductor device includes conductive layers and interlayer insulating layers stacked alternately with each other, at least one first channel layer passing through the conductive layers and the interlayer insulating layers, at least one second channel layer coupled to the first channel layers and passing through the conductive layers and the interlayer insulating layers, a first insulating layer interposed between the at least one first channel layer and the conductive layers, and a second insulating layer interposed between the at least one second channel layer and the conductive layers and having a higher nitrogen concentration than the first insulating layer.
Claims19
A semiconductor device, comprising:
- conductive layers and interlayer insulating layers stacked alternately with each other;
- at least one first channel layer passing through the conductive layers and the interlayer insulating layers;
- at least one second channel layer coupled to the first channel layers and passing through the conductive layers and the interlayer insulating layers;
- a first insulating layer interposed between the at least one first channel layer and the conductive layers;
- and
- a second insulating layer interposed between the at least one second channel layer and the conductive layers and having a higher nitrogen concentration than the first insulating layer.
A method of manufacturing a semiconductor device, the method comprising:
- alternately forming first material layers and second material layers;
- forming at least one channel hole passing through the first and second material layers;
- forming a first insulating layer along an inner wall of the at least one channel hole;
- forming a first channel layer over the first insulating layer;
- etching the first channel layer to expose a portion of the first insulating layer;
- nitriding an exposed portion of the first insulating layer;
- and
- forming a second channel layer on a nitrided portion of the first insulating layer.
Dependencies are inferred from the claim text.