Solid-state imaging device and semiconductor device

A solid-state imaging device comprising:

• a semiconductor substrate including a pixel area and a peripheral circuit area and having a first principal surface and a second principal surface;
• first lines provided in the peripheral circuit area and on the first principal surface of the semiconductor substrate and extending in a first direction;
• second lines provided in the peripheral circuit area and on the second principal surface of the semiconductor substrate and extending in the first direction;
• first through electrodes each connected to one end of a corresponding one of the first lines and one end of a corresponding one of the second lines and passing through the semiconductor substrate;
• and
• second through electrodes each connected to the other end of the corresponding one of the first lines and the other end of the corresponding one of the second lines and passing through the semiconductor substrate.

A semiconductor device comprising:

• a semiconductor substrate having a first principal surface and a second principal surface;
• MOSFETs provided on the first principal surface of the semiconductor substrate;
• a first line provided on the first principal surface of the semiconductor substrate, extending in a first direction, and connected to one of the MOSFETs;
• a second line provided on the second principal surface of the semiconductor substrate and extending in the first direction;
• a first through electrode connected to one end of the first line and one end of the second line and passing through the semiconductor substrate;
• and
• a second through electrode connected to one end of the first line and one end of the second line and passing through the semiconductor substrate.