Semiconductor structure and manufacturing method thereof

A method of manufacturing a semiconductor structure gate layer, the method comprising:

• providing a gate layer, a first cap layer, and a second cap layer, wherein the second cap layer is on the gate layer and the first cap layer is on the second cap layer;
• forming a first pattern on the first cap layer comprising a large pitch area and a small pitch area;
• forming a spacer on the first cap layer;
• forming a plurality of large spacer columns and a plurality of small spacer columns by removing the first cap layer with a selective etch;
• is providing a photoresist on the large spacer columns;
• and
• transferring the features and shapes of the spacer columns in concurrency with the photoresist to the gate layer to form a first portion with fine gate lines and a second portion with large gate pattern.