Nano resonance apparatus and method
AssigneesKorea University Industrial & Academic Collaboration Foundation, Samsung Electronics Co., Ltd.
InventorsIn Sang Song, Ho Soo Park, Duck Hwan Kim, Sang Uk Son, Jae Shik Shin, Jae-Sung Rieh, Byeong Kwon Ju, Dong Hoon Hwang
Life of this patent
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Abstract
A nano resonance apparatus includes a gate electrode configured to generate a magnetic field, and a nanowire connecting a source electrode to a drain electrode and configured to vibrate in the presence of the magnetic field. The nanowire includes a protruding portion extending in a direction of the gate electrode.
Claims20
A nano resonance apparatus comprising:
- a gate electrode configured to generate a magnetic field;
- and
- a nanowire connecting a source electrode to a drain electrode and configured to vibrate in the presence of the magnetic field, the nanowire comprising a protruding portion extending in a direction of the gate electrode.
A nano resonance apparatus comprising:
- a nanowire connecting a source electrode to a drain electrode;
- and
- a gate electrode configured to generate a magnetic field and to vibrate with the nanowire in the presence of the magnetic field, the gate electrode comprising at least one protruding portion extending in a direction of the nanowire.
A nano resonance apparatus comprising:
- a gate electrode configured to generate a magnetic field;
- and
- a nanowire connecting a source electrode to a drain electrode and configured to vibrate with the gate electrode in the presence of the magnetic field;
- wherein the gate electrode comprises at least one protruding portion extending in a direction of the nanowire.
A nano resonance apparatus comprising:
- a gate electrode configured to generate a magnetic field;
- and
- a nanowire connecting a source electrode to a drain electrode and configured to vibrate with the gate electrode in the presence of the magnetic field, the nanowire comprising at least one protruding portion extending in a direction of the gate electrode.
A nano resonance method performed by a nano resonance apparatus, the method comprising:
- generating a magnetic field using a gate electrode of the nano resonance apparatus;
- and
- vibrating a nanowire of the nano resonance apparatus in the presence of the magnetic field;
- wherein the nanowire comprises at least one protruding portion extending in a direction of the gate electrode.
A nano resonance method performed by a nano resonance apparatus, the method comprising:
- generating a magnetic field using a gate electrode of the nano resonance apparatus;
- and
- vibrating the gate electrode of the nano resonance apparatus in the presence of the magnetic field;
- wherein the gate electrode comprises at least one protruding portion extending in a direction of a nanowire of the nano resonance apparatus.
A nano resonance method performed by a nano resonance apparatus, the method comprising:
- generating a magnetic field using a gate electrode of the nano resonance apparatus;
- and
- vibrating the gate electrode of the nano resonance apparatus with a nanowire of the nano resonance apparatus in the presence of the magnetic field;
- wherein the gate electrode comprises at least one protruding portion extending in a direction of the nanowire.
A nano resonance method performed by a nano resonance apparatus, the method comprising:
- generating a magnetic field using a gate electrode of the nano resonance apparatus;
- and
- vibrating a nanowire of the nano resonance apparatus with the gate electrode of the nano resonance apparatus in the presence of the magnetic field;
- wherein the nanowire comprises at least one protruding portion extending in a direction of the gate electrode.
A nano resonance apparatus comprising:
- a gate electrode configured to generate a magnetic field;
- and
- a nanowire;
- wherein the gate electrode comprises a protruding portion extending in a direction of the nanowire, and the nanowire does not comprise a protruding portion or an indented portion;
- or
- the nanowire comprises a protruding portion extending in a direction of the gate electrode, and the gate electrode does not comprise a protruding portion or an indented portion;
- or
- the gate electrode comprises a protruding portion extending in a direction of the nanowire, and the nanowire comprises an indented portion corresponding to the protruding portion of the gate electrode;
- or
- the nanowire comprises a protruding portion extending in a direction of the gate electrode, and the gate electrode comprises an indented portion corresponding to the protruding portion of the nanowire.
Dependencies are inferred from the claim text.