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US 2014/0110760 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsRyohei Nega, Yoshinao Miura
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Abstract
Provided is a semiconductor device including: a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected to an input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.
Claims8
A semiconductor device comprising:
- a DC/DC converter circuit,
- wherein the DC/DC converter circuit includes
- a first transistor of a normally-off type, having a first drain electrode connected to an input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and
- a second transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.
1 more element
Dependencies are inferred from the claim text.