Semiconductor device
AssigneePanasonic Corporation
InventorsTomohiro MURATA, Daisuke SHIBATA, Tetsuzo UEDA
Life of this patent
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Abstract
A semiconductor device includes a first hetero-junction body in which a first channel layer and a first barrier layer are bonded together; a second hetero-junction body in which a second channel layer formed on the first hetero-junction body and a second barrier layer are bonded together; a gate electrode in Schottky contact with the second barrier layer; and source and drain electrodes in ohmic contact with the first and second hetero-junction bodies. At least one of the first and second channel layers has such a thickness that an electron concentration in a 2DEG layer formed in the channel layer is not reduced.
Claims8
A semiconductor device comprising:
- a first hetero-junction body in which a first nitride semiconductor layer and a second nitride semiconductor layer having a greater band gap than that of the first nitride semiconductor layer are bonded together;
- a second hetero-junction body in which a third nitride semiconductor layer formed on the first hetero-junction body and a fourth nitride semiconductor layer having a greater band gap than that of the third nitride semiconductor layer are bonded together;
- a first electrode in Schottky contact with at least the fourth nitride semiconductor layer;
- and
- a second electrode in ohmic contact with the first and second hetero-junction bodies,
- wherein the first nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the first nitride semiconductor layer is not reduced, or
- the third nitride semiconductor layer has such a thickness that an electron concentration in a 2-dimentional electron gas layer formed in the third nitride semiconductor layer is not reduced.
Dependencies are inferred from the claim text.