Fabricating method of semiconductor device and semiconductor device fabricated using the same method

A fabricating method of a semiconductor device, the method comprising:

• providing a substrate having a first region and a second region, the second region having a higher density of gates thereon than the first region;
• implanting an etch rate adjusting dopant into the second region, while blocking the first region;
• and
• forming first and second trenches in the first and second regions, respectively, by dry etching.

A semiconductor device, comprising:

• a substrate having a first region and a second region defined therein;
• a plurality of first gates spaced apart from each other at a first pitch in the first region;
• a plurality of second gates spaced apart from each other at a second pitch different from the first pitch in the second region;
• a first trench in the first region between the plurality of first gates;
• a second trench in the second region between the plurality of second gates;
• a first SiGe epitaxial layer in at least a portion of the first trench;
• and
• a second SiGe epitaxial layer in at least a portion of the second trench, the first trench and the second trench having a same depth.