Apparatus and Method for Forming Semiconductor Contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJean-Pierre Colinge
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Abstract
A method for forming semiconductor contacts comprises forming a germanium fin structure over a silicon substrate, depositing a doped amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure and performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.
Claims20
An apparatus comprising:
- a substrate formed of a first material;
- an isolation region formed in a substrate;
- a fin structure formed over the substrate, wherein the fin structure is formed of a second material, and wherein the fin structure protrudes above a top surface of the isolation region, and wherein the fin structure comprises:
- a channel connected between a first drain/source region and a second drain/source region;
- a gate electrode wrapping the channel of the fin structure;
- a first barrier-less contact region formed over the first drain/source region;
- and
- a first metal contact formed over the first barrier-less contact region.
A method comprising:
- forming a germanium fin structure over a silicon substrate, wherein the germanium fin structure comprises:
- a channel connected between a first drain/source region and a second drain/source region;
- depositing an N+ amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure;
- and
- performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.
A method comprising:
- forming a germanium fin over a silicon substrate, wherein the germanium fin comprises:
- a first drain/source region;
- a second drain/source region;
- and
- a channel coupled between the first drain/source region and the second drain/source region;
- forming a gate structure over the channel, wherein the gate structure comprises:
- a gate dielectric layer;
- and
- a gate electrode layer formed over the gate dielectric layer;
- depositing a first amorphous silicon layer over the first drain/source region at a first temperature;
- depositing a second amorphous silicon layer over the second drain/source region at a second temperature;
- and
- performing a solid phase epitaxial regrowth process on the first amorphous silicon layer and the second amorphous silicon layer at a third temperature.
Dependencies are inferred from the claim text.