Epitaxy Technique for Growing Semiconductor Compounds
AssigneeSensor Electronic Technology, Inc.
InventorsRakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Michael Shur
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Abstract
A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.
Claims22
A method of fabricating a semiconductor structure, the method comprising:
- growing a plurality of semiconductor layers over a substrate using a set of epitaxial growth periods, wherein each epitaxial growth period includes:
- epitaxially growing a first semiconductor layer having one of:
- a tensile stress or a compressive stress;
- and
- epitaxially growing a second semiconductor layer having the other of:
- the tensile stress or the compressive stress directly on the first semiconductor layer.
A semiconductor structure including:
- a substrate;
- and
- a plurality of semiconductor layers on the substrate, the plurality of semiconductor layers including a set of periods, each period including:
- a first semiconductor layer, wherein the first semiconductor layer has one of:
- a tensile stress or a compressive stress;
- and
- a second semiconductor layer directly on the first semiconductor layer, wherein the second semiconductor layer has the other of:
- the tensile stress or the compressive stress.
A method of fabricating a semiconductor structure, the method comprising:
- growing a plurality of group III nitride semiconductor layers over a substrate using a set of epitaxial growth periods, wherein each epitaxial growth period includes:
- epitaxially growing a first group III nitride semiconductor layer having one of:
- a tensile stress or a compressive stress;
- and
- epitaxially growing a second group III nitride semiconductor layer having the other of:
- the tensile stress or the compressive stress directly on the first semiconductor layer, wherein the epitaxially growing the first semiconductor layer and the epitaxially growing the second semiconductor layer use molar ratios of group V precursors to group III precursors that differ by at least ten percent.
Dependencies are inferred from the claim text.