Power Module and Method of Manufacturing the Power Module

A power module, comprising:

• an IGBT chip and a diode chip;
• a first conductive plate that is connected with solder to at least one emitter electrode surface provided on one side of the IGBT chip and to an anode electrode surface provided on one side of the diode chip;
• and
• a second conductive plate that is connected with solder to a collector electrode surface provided on the other side of the IGBT chip and to a cathode electrode surface provided on the other side of the diode chip, wherein
• at least one of the emitter electrode surfaces provided on the one side of the IGBT chip is double comb-shaped,
• the double comb-shaped electrode surface has a primary solder spreading electrode surface and a secondary solder spreading electrode surface extending in a comb-like manner from the primary solder spreading electrode surface to both sides thereof,
• the periphery of the emitter electrode surface is provided with a gate wiring, and
• the gate wiring is covered with a protective film having low wettability to solder compared to the emitter electrode surface and insulating properties.

A power module, comprising:

• an upper arm IGBT chip and an upper arm diode chip and a lower arm IGBT chip and a lower arm diode chip that make up an upper arm and a lower arm of an inverter circuit;
• a second AC electrode lead frame that is connected with solder to at least one emitter electrode surface provided on one side of the upper arm IGBT chip and to an anode electrode surface provided on one side of the upper arm diode chip;
• a DC positive electrode lead frame that is connected with solder to a collector electrode surface provided on the other side of the upper arm IGBT chip and to a cathode electrode surface provided on the other side of the upper arm diode chip;
• a DC negative electrode lead frame that is connected with solder to at least one emitter electrode surface provided on one side of the lower arm IGBT chip and to an anode electrode surface provided on one side of the lower arm diode chip;
• and
• a first AC electrode lead frame that is connected with solder to a collector electrode surface provided on the other side of the lower arm IGBT chip and to a cathode electrode surface provided on the other side of the lower arm diode chip, wherein
• at least one of the emitter electrode surfaces provided on each of the one side of the upper arm IGBT chip and the lower arm IGBT chip is double comb-shaped,
• the double comb-shaped electrode surface has a primary solder spreading electrode surface and a secondary solder spreading electrode surface extending in a comb-like manner from the primary solder spreading electrode surface to both sides thereof,
• the periphery of the emitter electrode surface is provided with a gate wiring, and
• the gate wiring is covered with a protective film having low wettability to solder compared to the emitter electrode surface and insulating properties.