Light-emitting diode element and light-emitting diode device

A light-emitting diode element, comprising:

• a first semiconductor layer of a first conductivity type which has a principal surface and a rear surface;
• a second semiconductor layer of a second conductivity type which is provided in a first region of the principal surface of the first semiconductor layer;
• an active layer interposed between the first semiconductor layer and the second semiconductor layer;
• a first electrode provided on a surface of the second semiconductor layer, the first semiconductor layer being interposed between the first electrode and the active layer;
• a second electrode provided in a second region of the principal surface of the first semiconductor layer;
• and
• a conductive layer that is arranged such that, in the rear surface of the first semiconductor layer, when viewed from a direction perpendicular to the rear surface, the conductive layer covers a third region lying between the first electrode and the second electrode, a fourth region which is adjacent to the third region and which overlaps at least part of the second electrode, and a fifth region which is adjacent to the third region and which overlaps part of the first electrode,
• wherein the conductive layer is in contact with the first semiconductor layer,
• the first semiconductor layer includes, in the rear surface of the first semiconductor layer, a sixth region which is not covered with the conductive layer and which overlaps another part of the first electrode when viewed from a direction perpendicular to the rear surface, and
• the first semiconductor layer of the first conductivity type is not provided with an electrode penetrating between the principal surface and the rear surface.