Semiconductor device and production method therefor
AssigneeNichia Corporation
InventorsMasafumi KURAMOTO, Satoru OGAWA, Miki NIWA
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AssigneeNichia Corporation
InventorsMasafumi KURAMOTO, Satoru OGAWA, Miki NIWA
Estimating the term…
An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.
A semiconductor device having a die shear strength of 13 to 55 MPa in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are directly bonded.
Dependencies are inferred from the claim text.