US 2014/0110736 A1Published application

Semiconductor light-emitting device and manufacturing method

AssigneeStanley Electric Co., Ltd.

InventorTakeshi Waragaya

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Abstract

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over a semiconductor epitaxial layer in order to emit various colored-lights including white light. The light-emitting device can include a semiconductor chip substrate configured not to transmit light emitted from the epitaxial layer and mounted on a mounting board, and a transparent resin layer located between the wavelength converting layer and the epitaxial layer mounted on the semiconductor chip substrate so as to extend from a side surface of the wavelength converting layer towards a substantially edge portion of the semiconductor chip substrate. The semiconductor light-emitting device can be configured to improve a color variability of a mixture light emitted from the device by using the transparent resin layer and the wavelength converting layer, and therefore can emit the mixture light having a substantially uniform color tone from a small light-emitting surface.

Claims20

Dependent claims

A semiconductor light-emitting device comprising:

a mounting board having a mounting surface and a first conductor pattern and at least one second conductor pattern formed on the mounting surface;
a semiconductor chip substrate having a bottom surface, a top surface, a side surface, a substantially edge portion located between the top surface and the side surface and a bottom electrode formed underneath the bottom surface, the semiconductor chip substrate mounted adjacent the mounting surface of the mounting board via a conductive adhesive layer, and thereby the bottom electrode of the semiconductor chip substrate being electrically connected to the first conductor pattern of the mounting board via the conductive adhesive layer;
a semiconductor epitaxial layer having a top surface, a bottom surface, a substantially center located on the top surface, at least one top electrode formed on the top surface of the semiconductor epitaxial layer and an optical axis intersected with the substantially center of the top surface of the semiconductor epitaxial layer at a right angle, the semiconductor epitaxial layer mounted on the top surface of the semiconductor chip substrate, each of the top surface and the bottom surface of the semiconductor epitaxial layer being smaller than the top surface of the semiconductor chip substrate, each of the bottom surface of the semiconductor epitaxial layer and the top surface of the semiconductor chip substrate contacting with respect to each other, and the at least one top electrode being electrically connected to the at least one second conductor pattern of the mounting board;
a wavelength converting layer having a top surface, a side surface, a bottom surface and a substantially edge portion located between the side surface and the bottom surface, the wavelength converting layer including at least one phosphor, formed in a substantially uniform thickness between the top surface and the bottom surface of the wavelength converting layer, and located over the top surface of the semiconductor epitaxial layer, the bottom surface of the wavelength converting layer facing the top surface of the semiconductor epitaxial layer, and therefore being either smaller than the top surface of the semiconductor epitaxial layer or substantially equal to the top surface of the semiconductor epitaxial layer;
a transparent resin layer having a side surface disposed on the top surface of the semiconductor epitaxial layer and the top surface of the semiconductor chip substrate, and covering at least the substantially edge portion of the wavelength converting layer, the side surface of the transparent resin layer extending from the side surface of the wavelength converting layer to the substantially edge portion of the semiconductor chip substrate, and therefore inclining from the side surface of the wavelength converting layer toward the substantially edge portion;
and
wherein the semiconductor chip substrate is configured with a reflective substrate.

4 more elements

A semiconductor light-emitting device, comprising:

a semiconductor chip substrate having a bottom surface, a top surface, a side surface, a substantially edge portion located between the top surface and the side surface and a bottom electrode formed underneath the bottom surface, and the semiconductor chip substrate configured with a reflective substrate;
a semiconductor epitaxial layer having a top surface, a bottom surface, a center located on the top surface, at least one top electrode formed on the top surface of the semiconductor epitaxial layer and an substantially optical axis intersected with the center of the top surface of the semiconductor epitaxial layer at a right angle, and each of the top surface and the bottom surface of the semiconductor epitaxial layer being smaller than the top surface of the semiconductor chip substrate, each of the bottom surface of the semiconductor epitaxial layer;
a wavelength converting layer having a top surface, a side surface, a bottom surface and a substantially edge portion located between the side surface and the bottom surface, the wavelength converting layer including at least one phosphor, formed in a substantially uniform thickness between the top surface and the bottom surface of the wavelength converting layer, and located over the top surface of the semiconductor epitaxial layer, the bottom surface of the wavelength converting layer facing the top surface of the semiconductor epitaxial layer, and therefore being either smaller than the top surface of the semiconductor epitaxial layer or substantially equal to the top surface of the semiconductor epitaxial layer;
and
a transparent resin layer having a side surface disposed on the top surface of the semiconductor epitaxial layer and the top surface of the semiconductor chip substrate, and covering at least the substantially edge portion of the wavelength converting layer, the side surface of the transparent resin layer extending from the side surface of the wavelength converting layer to the substantially edge portion of the semiconductor chip substrate, and therefore inclining from the side surface of the wavelength converting layer toward the substantially edge portion, and the side surface of the transparent resin layer formed in at least one of a substantially linear shape and a convex shape in an opposite direction of the semiconductor epitaxial layer between the side surface of the wavelength converting layer and the substantially edge portion of the semiconductor chip substrate.

2 more elements

Dependencies are inferred from the claim text.