US 2014/0110704 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes an oxide layer, a source electrode layer in contact with the oxide layer, a first drain electrode layer in contact with the oxide layer, a second drain electrode layer in contact with the oxide layer, a gate insulating film in contact with the oxide layer, a first gate electrode layer overlapping with the source electrode layer and the first drain electrode layer and overlapping with a top surface of the oxide layer with the gate insulating film interposed therebetween, a second gate electrode layer overlapping with the source electrode layer and the second drain electrode layer and overlapping with the top surface of the oxide layer with the gate insulating film interposed therebetween, and a third gate electrode layer overlapping with a side surface of the oxide layer with the gate insulating film interposed therebetween.

Claims18

Dependent claims

A semiconductor device comprising a first transistor, the first transistor comprising:

an oxide layer comprising a channel formation region;
a source electrode layer in contact with the oxide layer;
a first drain electrode layer in contact with the oxide layer;
a second drain electrode layer in contact with the oxide layer;
a gate insulating film in contact with the oxide layer;
a first gate electrode layer overlapping with a part of the source electrode layer, the first drain electrode layer, and a part of the oxide layer with the gate insulating film interposed therebetween;
a second gate electrode layer overlapping with the other part of the source electrode layer, the second drain electrode layer, and the other part of the oxide layer with the gate insulating film interposed therebetween;
and
a third gate electrode layer overlapping with a side surface of the oxide layer with the gate insulating film interposed therebetween.

6 more elements

A semiconductor device comprising a first transistor, the first transistor comprising:

a first oxide layer;
a second oxide layer;
an oxide semiconductor layer comprising a channel formation region between the first oxide layer and the second oxide layer;
a source electrode layer electrically connected to the oxide semiconductor layer;
a first drain electrode layer electrically connected to the oxide semiconductor layer;
a second drain electrode layer electrically connected to the oxide semiconductor layer;
a gate insulating film over the oxide semiconductor layer;
a first gate electrode layer overlapping with a part of the source electrode layer, the first drain electrode layer, and a part of the oxide semiconductor layer with the gate insulating film interposed therebetween;
a second gate electrode layer overlapping with the other part of the source electrode layer, the second drain electrode layer, and the other part of the oxide semiconductor layer with the gate insulating film interposed therebetween;
and
a third gate electrode layer overlapping with a side surface of the oxide semiconductor layer with the gate insulating film interposed therebetween.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims18