Thin film transistor structure and method for manufacturing the same

A method for manufacturing a thin film transistor structure, the method comprising:

• forming a gate on a substrate;
• forming a gate insulation layer on the substrate, the gate insulation layer covering the gate and a portion of the substrate;
• forming a metal oxide semiconductor layer on the gate insulation layer, wherein the metal oxide semiconductor layer exposes a portion of the gate insulation layer;
• forming a source and a drain on the metal oxide semiconductor layer, the source and the drain exposing a portion of a surface of the metal oxide semiconductor layer;
• and
• forming a passivation layer on the source and the drain, wherein the passivation layer covers the source, the drain, and the gate insulation layer and is in direct contact with the portion of the surface of the metal oxide semiconductor layer exposed by the source and the drain, so as to form a crystalline surface constituted by a plurality of grains separated from one another, and an indium content of the grains accounts for at least 50% of all metal elements of the metal oxide semiconductor layer.

A method for manufacturing a thin film transistor structure, the method comprising:

• forming a source and a drain on a substrate, the source and the drain exposing a portion of the substrate;
• forming a metal oxide semiconductor layer on the substrate, wherein the metal oxide semiconductor layer covers the source, the drain, and the portion of the substrate exposed by the source and the drain;
• forming a gate insulation layer on the substrate, wherein the gate insulation layer covers the metal oxide semiconductor layer, the source, and the drain, the gate insulation layer is in direct contact with the metal oxide semiconductor layer, so as to form a crystalline surface constituted by a plurality of grains separated from one another, and an indium content of the grains accounts for at least 50% of all metal elements of the metal oxide semiconductor layer;
• forming a gate on the gate insulation layer;
• and
• forming a passivation layer on the gate, the passivation layer covering the gate and the gate insulation layer.