Light emitting diode and manufacturing method thereof
AssigneeBoe Technology Group Co., Ltd.
InventorsFeng Zhang, Tianming Dai, Qi Yao
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Abstract
The embodiments of the present invention relate to a light emitting diode and manufacturing method thereof. The electroluminescent layer of the light-emitting diode is formed of graphene/compound semiconductor quantum dot composites.
Claims6
A light emitting diode comprising a substrate, a cathode, an electron transport layer, a electroluminescent layer, a hole transport layer and a transparent anode, wherein the electroluminescent layer is formed of graphene/compound semiconductor quantum dot composites.
A method of manufacturing a light emitting diode comprising the following steps:
- depositing a transparent anode layer on a substrate;
- dissolving graphene/compound semiconductor quantum dot composites and a material for a hole transport layer in an organic solvent;
- coating the surface of the transparent anode with the mixture;
- removing the solvent by heating so as to form a hole transport layer and a overlying electroluminescent layer formed of graphene/compound semiconductor quantum dot composites;
- depositing an electron transport layer;
- depositing a metal cathode layer.
A method of manufacturing a light emitting diode comprising the following steps:
- depositing a metal cathode layer on a substrate;
- depositing an electron transport layer;
- dissolving a graphene/compound semiconductor quantum dot composites in an organic solvent so as to obtain a mixture, coat the surface of the electron transport layer with the mixture;
- removing the solvent by heating so as to form an electroluminescent layer of graphene/compound semiconductor quantum dot composites;
- depositing a hole transport layer;
- depositing a transparent anode layer.
Dependencies are inferred from the claim text.