Iii-nitride quantum well structure, a method for producing the same, and a light-emitting unit using the same

A method for manufacturing an III-nitride quantum well structure, comprising:

• maintaining a substrate in a first growth temperature;
• adjusting a ratio of beam equivalent pressure between nitrogen and gallium as 91 so that a gallium nitride buffering layer is grown on the substrate by epitaxy;
• maintaining the substrate in the first growth temperature;
• adjusting the ratio of beam equivalent pressure between the nitrogen and the gallium as 163, so that a gallium nitride post is grown on the gallium nitride buffering layer by epitaxy and a gallium nitride pyramid is formed on the gallium nitride post by epitaxy;
• reducing a temperature of the substrate to a second growth temperature;
• adjusting ratios of beam equivalent pressure between the nitrogen, indium and the gallium as 4.99:1.19:1, so that an indium gallium nitride layer is grown on the gallium nitride pyramid;
• maintaining the substrate in the second growth temperature;
• and
• adjusting the ratio of beam equivalent pressure between the nitrogen and the gallium as 300 to 600, so that a gallium nitride covering layer is grown on the indium gallium nitride layer.

A light-emitting unit having a plurality of III-nitride quantum well structures, comprising:

• a body;
• and
• a plurality of light-emitting cells arranged on the body, wherein the light-emitting cells are adjacent to and coplanar with each other,
• wherein each of the plurality of light-emitting cells comprises a gallium nitride base, an indium gallium nitride layer, a gallium nitride covering layer and a conducting layer, wherein the gallium nitride base, the indium gallium nitride layer and the gallium nitride covering layer are stacked together in order and are embedded in the body, and wherein the conducting layer is arranged on the gallium nitride covering layer.