US 2014/0110659 A1 · NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer.

Claims21

Dependent claims

A method of manufacturing a nonvolatile memory device, the method comprising:

forming a first electrode;
forming, above the first electrode, a metal oxide material layer comprising a first metal oxide;
forming a mask above a portion of a main surface of the metal oxide material layer;
forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide;
removing the mask;
forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region, a second variable resistance layer comprising a third metal oxide having a degree of oxygen deficiency lower than the degree of oxygen deficiency of the first metal oxide, the low oxygen concentration region being a region of the metal oxide material layer other than the high oxygen concentration region;
and
forming a second electrode above the second variable resistance layer.

5 more elements

A nonvolatile memory device comprising:

a first electrode;
a first variable resistance layer including a low oxygen concentration region and a high oxygen concentration region, the low oxygen concentration region having contact with the first electrode and comprising a first metal oxide, and the high oxygen concentration region having contact with the low oxygen concentration region, separated from the first electrode by the low oxygen concentration region, and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide;
a second variable resistance layer having contact with both the low oxygen concentration region and the high oxygen concentration region in a same plane and comprising a third metal oxide having a degree of oxygen deficiency lower than the degree of oxygen deficiency of the first metal oxide;
and
a second electrode having contact with the second variable resistance layer,
wherein when viewed from a direction perpendicular to a main surface of the first variable resistance layer, an outer perimeter of the high oxygen concentration region and an outer perimeter of the first variable resistance layer have a point of tangency.

3 more elements

Dependencies are inferred from the claim text.

Nonvolatile memory device and method of manufacturing the same

Life of this patent

Nonvolatile memory device and method of manufacturing the same

Life of this patent

Abstract

Claims21