Memory constructions comprising thin films of phase change material

A memory construction, comprising:

• a first material;
• a film of phase change material over and directly against the first material;
• a second material over and directly against the film of phase change material and spaced from the first material by less than or equal to about 10 nanometers;
• wherein an entirety of the film between the first and second materials has a thickness of less than or equal to about 10 nanometers;
• wherein the memory construction is configured to transition from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and is configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state;
• and
• wherein at least one of the first and second materials comprises carbon, W, TiN, TaN or TiAlN;
• where the formulas of the listed compounds indicate the components within the compounds rather than designating specific stoichiometries.

A memory construction, comprising:

• a first material;
• a film of phase change material over and directly against the first material;
• a second material over and directly against the film of phase change material and spaced from the first material by less than or equal to about 10 nanometers;
• wherein an entirety of the film between the first and second materials has a thickness of less than or equal to about 10 nanometers;
• wherein the memory construction is configured to transition from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and is configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state;
• and
• wherein at least one of the first and second materials comprises carbon.

A memory construction, comprising:

• a first material;
• a film of phase change material over and directly against the first material;
• a second material over and directly against the film of phase change material and spaced from the first material by less than or equal to about 10 nanometers;
• wherein an entirety of the film between the first and second materials has a thickness of less than or equal to about 10 nanometers;
• wherein the memory construction is configured to transition from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and is configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state;
• and
• wherein at least one of the first and second materials consists of carbon doped with one or more of indium, arsenic and germanium.

A memory construction, comprising:

• a first high thermal resistance structure;
• a film of phase change material over and directly against the first high thermal resistance structure;
• a second high thermal resistance structure over and directly against the film of phase change material;
• wherein the first and second high thermal resistance structures comprise at least an order of magnitude greater thermal resistivity than the film of phase change material;
• wherein the memory construction is configured to transition from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and is configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state;
• and
• wherein at least one of the first and second high thermal resistance structures comprises one or more of carbon, W, TiN, TaN and TiAlN;
• where the formulas of the listed compounds indicate the components within the compounds rather than designating specific stoichiometries.

A memory construction, comprising:

• a first high thermal resistance structure;
• a film of phase change material over and directly against the first high thermal resistance structure;
• a second high thermal resistance structure over and directly against the film of phase change material;
• wherein the first and second high thermal resistance structures comprise at least an order of magnitude greater thermal resistivity than the film of phase change material;
• wherein the memory construction is configured to transition from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and is configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state;
• and
• wherein at least one of the first and second high thermal resistance structures comprises carbon doped with one or more of indium, arsenic and germanium.

A memory construction, comprising:

• a first structure;
• a film of phase change material over and directly against the first structure;
• a second structure over and directly against the film of phase change material and spaced from the first structure by less than or equal to about 10 nanometers;
• wherein at least one of the first and second structures comprises a stack of at least two compositionally different bands;
• wherein an entirety of the film between the first and second structures has a thickness of less than or equal to about 10 nanometers;
• wherein the memory construction is configured to transition from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and is configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state;
• and
• wherein each of said at least two bands comprises a substance selected from the group consisting of carbon, W, TiN, TaN and TiAlN;
• where the formulas of the listed compounds indicate the components within the compounds rather than designating specific stoichiometries.