Memory constructions
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Agostino Pirovano
Life of this patent
Estimating the term…
Abstract
Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors.
Claims12
1-20. (canceled)
A memory construction comprising:
- a bottom electrode;
- a stack over the bottom electrode;
- said stack comprising chalcogenide bands alternating with non-chalcogenide bands;
- wherein there at least two of the chalcogenide bands and at least one of the non-chalcogenide bands;
- a top electrode over the stack;
- the stack including a first electrically conductive material between the to electrode and an uppermost of the chalcogenide bands;
- the stack including a second electrically conductive material between a lowermost of the chalcogenide bands and the bottom electrode;
- and
- wherein at least one of the first and second electrically conductive materials comprises carbon.
A memory construction comprising:
- a bottom electrode;
- a stack over the bottom electrode;
- said stack comprising chalcogenide bands alternating with non-chalcogenide bands;
- wherein there at least two of the chalcogenide bands and at least one of the non-chalcogenide bands;
- a top electrode over the stack;
- the stack including a first electrically conductive material between the to electrode and an uppermost of the chalcogenide bands;
- the stack including a second electrically conductive material between a lowermost of the chalcogenide bands and the bottom electrode;
- and
- wherein both of the first and second electrically conductive materials comprise carbon.
A memory construction comprising:
- a bottom electrode;
- a stack over the bottom electrode;
- said stack comprising chalcogenide bands alternating with non-chalcogenide bands;
- wherein there at least two of the chalcogenide bands and at least one of the non-chalcogenide bands;
- a top electrode over the stack;
- the stack including a first electrically conductive material between the to electrode and an uppermost of the chalcogenide bands;
- the stack including a second electrically conductive material between a lowermost of the chalcogenide bands and the bottom electrode;
- and
- a select device electrically coupled to the bottom electrode.
Dependencies are inferred from the claim text.