Method of producing sulfide compound semiconductor by use of solvothermal method and rod-like crystal of sulfide compound semiconductor
AssigneesKochi University, Toyota Jidosha Kabushiki Kaisha
InventorsSumio Kamiya, Keisuke Kishita, Kazumichi Yanagisawa, Haijun Tao
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Abstract
The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.
Claims15
1-14. (canceled)
A method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, the method comprising:
- a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, the solvothermal reaction in the solvothermal step being conducted at a temperature more than 250° C. and 450° C. or lower using an apparatus that uses a nickel alloy.
The method according to 15, wherein a concentration of the S is in the range of 0.2 to 4.0 mol/L.
A rod-like crystal of sulfide compound semiconductor, comprising:
- Cu, Zn, Sn and S.
Dependencies are inferred from the claim text.