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US 2014/0110596 A1Published application
Apparatus for treating ion beam
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorShengwu Chang
Life of this patent
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Abstract
An ion beam scanning assembly includes a set of scanning electrodes defining a gap to accept an ion beam and scan the ion beam in a first plane, and a multipole electrostatic lens system comprising a plurality of electrodes arranged along a portion of a path of travel of the ion beam bounded by the pair of scanning electrodes, the multipole electrostatic lens system configured to shape the ion beam in a direction perpendicular to the first plane.
Claims20
An ion beam scanning assembly comprising:
- a set of scanning electrodes defining a gap therebetween to accept an ion beam and scan the ion beam in a first plane;
- and
- a multipole electrostatic lens system comprising a plurality of electrodes arranged along a portion of a path of travel of the ion beam bounded by the set of scanning electrodes, the multipole electrostatic lens system configured to shape the ion beam in a direction perpendicular to the first plane.
A method of treating an ion beam, comprising:
- generating one or more oscillating electric fields along a first plane perpendicular to the ion beam over a portion of an ion beam path of the ion beam;
- applying a first set of non-zero voltages to a first lens of a multipole electrostatic lens system, the first lens comprising at least one pair of electrodes configured to bound opposite sides of the beam path over a first segment of the portion of the beam path;
- and
- applying a second set of voltages to a second lens of the multipole electrostatic lens system, the second lens comprising at least one additional pair of electrodes configured to bound opposite sides of the beam path over a second segment of the portion of the beam path further from an ion source to generate the ion beam.
1 more element
(canceled)
Dependencies are inferred from the claim text.