Image sensor device with ir filter and related methods
AssigneeSTMicroelectronics Asia Pacific PTE LTD (Singapore)
InventorsJerome Teysseyre, Yonggang Jin
Life of this patent
Estimating the term…
Abstract
An image sensor device may include a bottom interconnect layer, an image sensing IC above the bottom interconnect layer and coupled thereto, and an adhesive material on the image sensing IC. The image sensor device may include an IR filter layer above the lens layer, and an encapsulation material on the bottom interconnect layer and surrounding the image sensing IC, the lens layer, and the IR filter layer. The image sensor device may include a top contact layer above the encapsulation material and including a dielectric layer, and a contact thereon, the dielectric layer being flush with adjacent portions of the IR filter layer.
Claims25
An image sensor device comprising:
- a bottom interconnect layer;
- an image sensing integrated circuit (IC) above said bottom interconnect layer and coupled thereto;
- an adhesive material on said image sensing IC;
- an infrared (IR) filter layer above said image sensing IC;
- an encapsulation material on said bottom interconnect layer and surrounding said image sensing IC, and said IR filter layer;
- and
- a top contact layer above said encapsulation material and comprising a dielectric layer, and at least one contact thereon, said dielectric layer being flush with adjacent portions of said IR filter layer.
An image sensor device comprising:
- a bottom interconnect layer;
- an image sensing integrated circuit (IC) above said bottom interconnect layer and coupled thereto;
- an adhesive material on said image sensing IC and defining a recess above said image sensing IC;
- an infrared (IR) filter glass layer above said recess;
- an encapsulation material on said bottom interconnect layer and surrounding said image sensing IC, said recess and said IR filter glass layer;
- said image sensing IC having a sensing surface adjacent said recess and opposite said bottom interconnect layer;
- and
- a top contact layer above said encapsulation material and comprising a dielectric layer, and at least one contact thereon, said dielectric layer being flush with adjacent portions of said IR filter glass layer.
An image sensor device comprising:
- a bottom interconnect layer;
- an image sensing integrated circuit (IC) above said bottom interconnect layer and coupled thereto;
- an adhesive material on said image sensing IC and defining a recess above said image sensing IC;
- an infrared (IR) filter glass layer above said recess;
- and
- an encapsulation material on said bottom interconnect layer and surrounding said image sensing IC, said recess, and said IR filter glass layer;
- said image sensing IC having a sensing surface adjacent said bottom interconnect layer and opposite said recess.
A method for making an image sensor device comprising:
- positioning an adhesive material on an image sensing integrated circuit (IC);
- positioning an infrared (IR) filter layer above the image sensing IC;
- forming an encapsulation material surrounding the image sensing IC, and the IR filter layer;
- forming a bottom interconnect layer on the image sensing IC and adjacent portions of the encapsulation material;
- and
- forming a top contact layer above the encapsulation material and comprising a dielectric layer, and at least one contact thereon, the dielectric layer being flush with adjacent portions of said IR filter glass layer.
The method of claim 25 further comprising positioning a lens module above the IR filter layer and coupled to the at least one contact.
Dependencies are inferred from the claim text.