Method of etching copper layer and mask
AssigneeTokyo Electron Limited
InventorsEiichi Nishimura, Masato Kushibiki, Takashi Sone, Akitaka Shimizu, Fumiko Yamashita
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Abstract
A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.
Claims5
A method of etching a copper layer of a target object including, on the copper layer, a first mask having a pattern to be transferred onto the copper layer, the method comprising:
- etching the copper layer by using plasma of a first gas containing a hydrogen gas;
- and
- processing the target object by using plasma of a second gas containing a hydrogen gas and a gas that is deposited on the target object,
- wherein the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.
A mask used for etching a copper layer, the mask comprising:
- a first mask portion formed from a first layer that is made of silicon nitride or silicon oxide and is formed on the copper layer;
- and
- a second mask portion formed from a second layer that is made of TiN and is formed on the first layer.
Dependencies are inferred from the claim text.