Light induced nickel plating method for p-type silicon and n/p solar cell material
AssigneeAtomic Energy Council-Institute of Nuclear Research
InventorsYu-Han Su, Wei-Yang Ma, Tsun-Neng Yang
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AssigneeAtomic Energy Council-Institute of Nuclear Research
InventorsYu-Han Su, Wei-Yang Ma, Tsun-Neng Yang
Estimating the term…
A simple and fast light induced nickel plating method for p-type silicon wafer and n/p silicon solar cell material is revealed. When a n/p solar cell or p-Si semiconductor substrate, which is subjected to metallization with metal contact on the rear side, is immersed in a plating bath, metal ions are reduced on the front surface of semiconductor as soon as illumination starts on the front. The mechanism of nickel plating in this invention is nickel electroplating under the reduction reaction with the use of interfacial potential between the nickel plating bath and the metal surface. It does not need any surface catalytic processing and extra voltage. Instead, it can carry out the nickel deposition on the specific surface with a high nickel plating rate, a simple process and a low production cost.
A simple and fast light induced nickel plating method for p-type silicon wafer and n/p silicon solar cell material at least comprising the following steps:
Dependencies are inferred from the claim text.