Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor

Abstract

The purpose of the present invention is to provide a sputtering target with which a film having excellent characteristics can be obtained. A sputtering target (100) is constituted of a plurality of target members (10), a backing plate (20), a bonding agent (30), and protective members (50). The plurality of target members (10) and the backing plate (20) are bonded to each other with the bonding agent (30) therebetween. On a backing plate (20) surface that corresponds in position to gaps (15) between adjacent target members (10), grooves (40) are formed. Each of the grooves (40) is provided with the protective members (50), which are composed of the same material as that of the target members (10). The width (W2) of the protective members (50) is greater than the width (W1) of the gaps (15), and is less than the width (W3) of the grooves (40). The thickness (T4) of the protective members (50) is larger than the depth (D1) of the grooves (40).

Dependencies are inferred from the claim text.