Adjusting substrate temperature to improve cd uniformity

The method of claim 1 plasma etching system of claim 6, wherein when the number of the heater zones and the number of the device die locations are equal,

• and heater power setpoints for the heater zones are determined by multiplying an inversed matrix describing a relationship of the target control parameters of the heater zones and the target etching temperatures of the device die locations by a vector whose elements are the target etching temperatures of the device die locations.

(canceled)

A plasma etching system comprising a substrate support assembly for supporting a substrate during plasma etching, the substrate support assembly comprising a plurality of independently controllable heater zones in an arrangement under the substrate, and a controller unit that controls each heater zone wherein the controller deduces a target etching temperature for predetermined locations on the substrate from at least one of process recipe parameters, target post-etch critical device parameters, the pre-etch critical device parameters measured on a plurality of device die locations on the substrate, and the post-etch critical device parameter from previously etched substrates and adjusts temperature of each device die location to its target etching temperature, using the controllable heater zones.

9-16. (canceled)