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US 2014/0109958 A1Published application
Method of in-situ fabricating intrinsic zinc oxide layer and the photovoltaic device thereof
AssigneeTSMC Solar Ltd.
InventorsShih-Wei CHEN, Wei-Lun XU, Wen-Tsai YEN, Chung-Hsien WU, Wen-Chin LEE
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Abstract
A method of fabricating a photovoltaic device includes forming an absorber layer for photon absorption over a substrate, forming a buffer layer above the absorber layer, wherein both the absorber layer and the buffer layer are semiconductors, and forming a layer of intrinsic zinc oxide above the buffer layer through a hydrothermal reaction in a solution of a zinc-containing salt and an alkaline chemical.
Claims20
A method of fabricating a photovoltaic device, comprising:
- forming an absorber layer for photon absorption over a substrate;
- forming a buffer layer above the absorber layer, wherein both the absorber layer and the buffer layer are semiconductors;
- and
- forming a layer of intrinsic zinc oxide above the buffer layer through a hydrothermal reaction in a solution, the solution comprising a zinc-containing salt and an alkaline chemical.
1 more element
A method of fabricating a photovoltaic device, comprising:
- forming an absorber layer for photon absorption comprising CuInxGa(1-x)Se2, where x is in the range of from 0 to 1;
- forming a buffer layer comprising CdS or ZnS above the absorber layer;
- and
- forming a layer of intrinsic zinc oxide directly on the buffer layer through a hydrothermal reaction in a solution comprising a zinc-containing salt and an alkaline chemical at a temperature in the range from 50° C. to 100° C.
- wherein the layer of intrinsic zinc oxide is less than 140 nm in thickness.
2 more elements
A photovoltaic device comprising:
- an absorber layer over a substrate for photon absorption;
- a buffer layer disposed above the absorber layer, wherein both the absorber layer and the buffer layer are semiconductors;
- and
- a layer of intrinsic zinc oxide of less than 140 nm in thickness disposed above the buffer layer.
1 more element
Dependencies are inferred from the claim text.