Cleaning Formulations
AssigneeAir Products and Chemicals, Inc.
InventorsYi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Abstract
A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.
Claims37
A composition useful for removing residue from a semiconductor substrate, the composition comprising:
- a) from about 15% to about 50% by weight of water;
- b) from about 10% to about 65% by weight of a water-miscible organic solvent;
- c) from about 1% to about 50% by weight of an amine compound selected from the group consisting of a at least one alkanolamine and aminopropylmorpholine;
- d) from about 1% to about 25% by weight of an organic acid;
- and
- e) from about 0.01% to about 8% by weight of a fluoride ion source, wherein the water-miscible organic solvent is not an ether.
A replenishment composition to be added to a cleaning composition, said replenishment composition comprises a) from about 20% to about 84% by weight of water;
- b) from about 15% to about 40% by weight of a water-miscible organic solvent, wherein the water-miscible solvent is not an ether;
- c) from about 1% to about 5% by weight of an amine compound selected from the group consisting of at least one alkanolamine and at least one aminopropylmorpholine.
A method for removing unwanted residues from a semiconductor substrate comprising the steps of:
- contacting the semiconductor substrate with a cleaning composition comprising:
- a) from about 15% to about 50% by weight of water;
- b) from about 10% to about 65% by weight of a water-miscible organic solvent, wherein the water-miscible solvent is not an ether;
- c) from about 1% to about 20% by weight of an amine compound selected from the group consisting of at least one alkanolamine and at least one aminopropylmorpholine;
- d) from about 1% to about 25% by weight of at least one organic acid;
- and e) from about 0.01% to about 8% by weight of a fluoride ion source, wherein said contacting step results in a loss of a portion of said cleaning composition;
- and adding a replenishment composition to said cleaning composition;
- said replenishment composition comprising:
- a) from about 20% to about 84% by weight of water;
- b) from about 15% to about 40% by weight of a water-miscible organic solvent, wherein the water-miscible solvent is not an ether;
- c) from about 1% to about 5% by weight of an amine compound selected from the group consisting of at least one alkanolamine and at least one aminopropylmorpholine.
A composition useful for removing residue from a semiconductor substrate, the composition consisting essentially of:
- a) from about 15% to about 50% by weight of water;
- b) from about 10% to about 65% by weight of a water-miscible organic solvent, wherein the water-miscible solvent is not an ether;
- c) from about 1% to about 50% by weight of an amine compound selected from the group consisting of a at least one alkanolamine and aminopropylmorpholine;
- d) from about 1% to about 25% by weight of an organic acid;
- e) from about 0.01% to about 8% by weight of a fluoride ion source;
- and
- f) optionally, from about 0.1% to about 15% by weight of a corrosion inhibitor selected from the group consisting of benzotriazole, amino-benzotriazole, L-ascorbic acid, gallic acid, vanillin, diethylhydroxylamine, and mixtures thereof.
Dependencies are inferred from the claim text.