Vapor deposition method and vapor deposition apparatus

A vapor deposition apparatus configured to perform vapor deposition of a nitride semiconductor crystal layer on a substrate using a group III source-material gas and a group V source-material gas, the apparatus comprising:

• a reaction chamber, the substrate being disposed in the reaction chamber;
• a first gas supply unit communicating with the reaction chamber to supply a first gas flow comprising the group III source-material gas toward the substrate in a first direction, the first gas supply unit including a first mixing unit to mix the group III source-material gas and the group V source-material gas and supply the mixed group III and group V source-material gases toward the reaction chamber side of the first gas supply unit, the first gas supply unit including a first supply pipe communicating with the reaction chamber to supply the group III source-material gas into the reaction chamber and a second supply pipe communicating with the reaction chamber to supply the group V source-material gas into the reaction chamber, the first mixing unit being a portion of an interior of the reaction chamber, the first supply pipe and the second supply pipe being connected to the first mixing unit, the group III source-material gas and the group V source-material gas mixing with each other on the first and second supply pipe side of an end portion of the first mixing unit, the end portion being on the substrate side of the first mixing unit;
• and
• a second gas supply unit communicating with the reaction chamber to supply a second gas flow comprising the group V source-material gas toward the substrate in a second direction along the first direction.

A vapor deposition apparatus configured to perform vapor deposition of a nitride semiconductor crystal layer on a substrate using a group III source-material gas and a group V source-material gas, the apparatus comprising:

• a reaction chamber, the substrate being disposed in the reaction chamber;
• a first gas supply unit communicating with the reaction chamber to supply a first gas flow comprising the group V source-material gas toward the substrate in a first direction;
• and
• a second gas supply unit communicating with the reaction chamber to supply a second gas flow comprising the group III source-material gas toward the substrate in a second direction along the first direction, the second gas supply unit including a first mixing unit to mix the group III source-material gas and the group V source-material gas and supply the mixed group III and group V source-material gases toward the reaction chamber side of the second gas supply unit, the second gas supply unit including a first pipe introducing the group V source-material gas, the first mixing unit being provided between the first pipe and the reaction chamber, the second gas supply unit including a pipe introducing the group III source-material gas and connected to the first pipe side of the first mixing unit.