Lithography process
AssigneeCommissariat A L'energie Atomique Et Aux Ene Alt
InventorSebastien Pauliac
Life of this patent
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Abstract
A lithography method including: a preparation, during which a resist layer is deposited on a substrate, and a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, and during the preliminary lithography, a formation of at least one positioning mark forming a relief in the resist layer. The method further includes at least one subsequent lithography applied to the resist layer and including: a preliminary positioning including positioning a lithography mechanism as a function of the at least one positioning mark, and at least one formation of additional patterns in the resist layer using the lithography mechanism positioned as a function of the at least one positioning mark.
Claims26
1-23. (canceled)
A lithography method comprising:
- a preparation, during which a resist layer is deposited on a substrate;
- a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, wherein the preliminary lithography comprises nanoimprinting, during which a mold provided with reliefs penetrates into the resist layer to generate the at least one preliminary pattern and at least one positioning mark forming a relief in the resist layer, at least some of the patterns generated by the mold having different depths;
- and
- at least one subsequent lithography applied to the resist layer and including:
- a preliminary positioning including positioning lithography means as a function of the at least one positioning mark;
- at least one formation of additional patterns in the resist layer using the lithography means positioned as a function of the at least one positioning mark, the formation of the additional patterns comprising exposure of at least part of a preliminary pattern.
A multilayer assembly comprising:
- a substrate topped with a resist layer, the resist layer comprising a plurality of preliminary hollow patterns,
- wherein the resist layer comprises at least one positioning mark forming a hollow relief in the resist layer and configured to permit positioning of a lithography apparatus relative to the at least one positioning mark, and
- wherein the at least one positioning mark has a depth greater than a depth of the preliminary patterns.
Dependencies are inferred from the claim text.