Block copolymer assembly
AssigneeSeagate Technology, Lcc
InventorsXiaoMin Yang, Kim Yang Lee, Hong Ying Wang
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Abstract
The embodiments disclose a block copolymer assembly structure, including a first pattern and second pattern with a first density of patterned features integrated in data and servo zones, a silicon substrate with thin film layers deposited thereon and patterned using the first density of first pattern and second pattern features and a template fabrication pattern with a second density greater than the first density created using ordered block copolymer periodic structures across a portion of the substrate.
Claims20
A block copolymer assembly, comprising:
- a first pattern having a first density with multi-dimensional features transferred into data zones of thin film layers that are deposited onto a silicon substrate;
- a second pattern of one-dimensional features transferred into servo zones of the thin film layers and configured to be integrated with the data zone;
- and
- a fabrication pattern with a second density greater than the first density, wherein the fabrication pattern is of ordered block copolymer periodic structures configured to be located across a portion of the silicon substrate.
An apparatus, comprising:
- means for etching in data zones first pattern first density multi-dimensional features into thin film layers deposited onto a silicon substrate;
- means for etching in servo zones second pattern one-dimensional features integrated with the data zone two-dimensional features into the thin film layers;
- and
- means for etching into the silicon substrate a fabrication pattern with a second density greater than the first density, wherein the fabrication pattern is of ordered block copolymer periodic structures configured to be located across a portion of the silicon substrate.
The apparatus of 10, further comprising means for depositing first pattern and second pattern thin film layers onto a substrate including thin film layer materials including carbon (C), titanium (Ti), chromium (Cr), imprint resist.
The apparatus of 10, further comprising means for using the first pattern and second pattern integrated data and servo features to direct across a portion of the substrate the phase separation of a disordered coating of block copolymer including poly(styrene-block-methyl methacrylate) P(S-b-MMA), polystyrene-polyethylene oxide (PS-PEO), poly(styrene-dimethyl siloxane) (PS-PDMS), sphere-forming block copolymers and cylinder-forming block copolymers.
The apparatus of 10, further comprising means for fabricating the fabrication pattern second density templates using an etch down to the entire substrate material including silicon or glass and across the entire substrate below the thin film layers.
The apparatus of 10, further comprising means for creating integrated first pattern multi-dimensional data zone features including two-dimensional thin film dots and second pattern servo features including one-dimensional thin film lines to create the template fabrication pattern of ordered block copolymer periodic structures across a portion of the substrate with a second density greater than the first density.
The apparatus of 10, further comprising means for using a dry lift-off pattern transfer process to imprint stacks using a fabrication pattern second density template etched using the second density template fabrication pattern of ordered block copolymer periodic structures across the entire substrate.
A block copolymer assembly structure, comprising:
- a first pattern and second pattern with a first density of patterned features integrated in data and servo zones;
- a silicon substrate with thin film layers deposited thereon and patterned using the first density of first pattern and second pattern features;
- and
- a template fabrication pattern with a second density greater than the first density created using ordered block copolymer periodic structures across a portion of the substrate.
Dependencies are inferred from the claim text.