Micro cmos power amplifier
OwnerSung Man YOON, Jong Jin PARKinventors
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OwnerSung Man YOON, Jong Jin PARKinventors
Estimating the term…
The present invention relates to a micro CMOS power amplifier, in which an output transformer is configured as a substrate of a multilayer structure, and an amplifier circuit module is stacked on the output transformer. The micro CMOS power amplifier includes: an amplifier circuit module chip configured by modularizing circuits for amplifying power as a module; and an output transformer for outputting output of the amplifier circuit module chip to outside through a transformer circuit, in which the output transformer is implemented on a multilayer substrate, and the amplifier circuit module chip and the output transformer are configured as a stack. According to the micro CMOS power amplifier of the present invention described above, an output transformer occupying a large space in a conventional power amplifier is configured as a multilayer substrate, and thus the chip size can be reduced within 50% without decreasing output power of the power amplifier.
A micro CMOS power amplifier comprising:
The amplifier according to claim 4, wherein the amplifier circuit module chip is positioned to be stacked on the first layer, and external terminals of the amplifier circuit module chip are connected to the primary winding connection pattern or the first input terminal pattern through a wire.
The amplifier according to claim 4, wherein both end units of the primary and secondary winding patterns are positioned in opposite directions.
The amplifier according to claim 4, wherein the third layer is formed with an extension unit by extending a first end unit of the secondary winding pattern, and the second layer is formed with a condenser pattern facing the extension unit, wherein the condenser pattern is connected to the a second end unit of the secondary winding pattern through a via hole.
Dependencies are inferred from the claim text.