Ion implantation apparatus
AssigneeNissin Ion Equipment Co., Ltd.
InventorMasao NAITO
Life of this patent
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Abstract
A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.
Claims7
An ion implantation apparatus that moves a substrate in a direction that intersects the short-side direction of a ribbon-like ion beam in a processing chamber to thereby irradiate the ion beam over the entire surface of the substrate, comprising:
- shaping masks that shape the two edges of the ion beam in the short-side direction prior to irradiation of the ion beam on the substrate;
- a profiler that measures the current distribution in the long-side direction of the ion beam shaped by the shaping masks and
- an electron beam supply unit that supplies an electron beam for the ion beam across the entire region in the long-side direction of the ion beam on the upstream side of the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam at each location in the long-side direction of the ion beam according to results of measurements by the profiler.
Dependencies are inferred from the claim text.