# US 2014/0042479 A1 · Light Emitting Diode Package with Enhanced Heat Conduction

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- Number: US 2014/0042479 A1
- Document ID: US20140042479A1
- Status: Published application
- Kind: A1
- Application number: 14/047,715
- Filed: 2013-10-07
- Published: 2014-02-13
- Earliest claimed: 2010-09-20
- Assignees: Viagan Ltd.
- Inventors: Mordehai Margalit
- Web page: https://patentgrep.com/patent/US20140042479A1

## CPC

- H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/8506: {Containers}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/0364: {of interconnections}
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/85: Packages
- H10H 20/852: Encapsulations
- H10H 20/858: Means for heat extraction or cooling
- H10H 20/8585: {being an interconnection}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting diode (LED) device and packaging with enhance heat conduction. An LED in a wafer level processing (WLP) package is disclosed using vias in the silicon to route the electrical connections to the LED backside and a dedicated hole in the silicon with a direct heat conduction route from the LED to the printed circuit board. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids or ameliorates heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate comprising phosphors and/or quantum dots.

## Claims

### Claim 1

A light emitting device, comprising:
a carrier wafer, wherein a substantial amount of carrier wafer is removed to create a relief;
a semiconductor LED including doped and intrinsic regions thereof, said semiconductor LED is affixed to said carrier wafer proximate to said relief;
a thermally conductive layer disposed adjacent to said semiconductor LED in said relief;
at least one optically reflective surface disposed between said carrier wafer and said semiconductor LED proximate to said carrier wafer; and
a substantially optically transmissive layer proximal to said semiconductor LED covering at least a portion of the above components.

### Claim 2 (depends on 1)

The light emitting device of claim 1, said at least one optically reflective surface comprising metal.

### Claim 3 (depends on 1)

The light emitting device of claim 1, said at least one optically reflective surface comprising a dielectric stack.

### Claim 4 (depends on 1)

The light emitting device of claim 1, wherein said semiconductor LED is affixed to said carrier wafer with an adhesive material which has the property of high thermal conductivity.

### Claim 5 (depends on 1)

The light emitting device of claim 1, wherein said semiconductor LED is affixed to said carrier wafer with an adhesive material which has the property of optical diffusion.

### Claim 6 (depends on 1)

The light emitting device of claim 1, wherein said semiconductor LED is affixed to said carrier wafer with an adhesive material which has the property of optical reflection.

### Claim 7 (depends on 1)

The light emitting device of claim 1, wherein said semiconductor LED is affixed to said carrier wafer with an adhesive material which has the property of optical transmissivity.

### Claim 8 (depends on 1)

The light emitting device of claim 1, further comprising at least one spacer attached to said carrier wafer; whereby, said at least one optically reflective surface is affixed thereto.

### Claim 9 (depends on 1)

The light emitting device of claim 1, said thermally conductive layer comprises metal.

### Claim 10 (depends on 1)

The light emitting device of claim 1, said thermally conductive layer comprises an organic material with a physical property of high thermal conductivity.

### Claim 11

A method for making light emitting device comprising the steps of:
forming a carrier wafer;
forming a plurality of doped layers in a light emitting device (LED) disposed on an optically permissive layer;
using an optically permissive adhesive to mechanically secure said LED onto said carrier wafer;
forming a recess in said carrier wafer proximate to said LED;
forming spacers on said carrier wafer proximate to said LED;
metalizing at least a portion of said spacers; and
filling said recess with a thermally conductive material.

### Claim 12 (depends on 11)

The method for making light emitting device of claim 11, further comprising encapsulating said LED with an optically permissive material and mechanically securing an optically transmissive cover substrate.

### Claim 13 (depends on 12)

The method of claim 12, further comprising suspending photoluminescent particles in the optically permissive material.

### Claim 14 (depends on 12)

The method of claim 12, further comprising suspending quantum dot particles in the optically permissive material.

### Claim 15 (depends on 11)

The method of claim 11, wherein the thermally conductive material comprises metal.

### Claim 16 (depends on 11)

The method of claim 11, wherein the thermally conductive material comprises an organic compound with high thermal conductivity.

### Claim 17 (depends on 11)

The method of claim 11, wherein the thermally conductive material comprises metal.

### Claim 18 (depends on 11)

The method of claim 11, wherein the optically permissive adhesive has the property of high thermal conductivity.

### Claim 19 (depends on 11)

The method of claim 11, wherein the optically permissive adhesive has the property of high thermal conductivity.

### Claim 20 (depends on 11)

The method of claim 11, wherein the optically permissive adhesive has the property of optical diffusion.
