Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, Michael C. Gaidis, Janusz J. Nowak, Daniel C. Worledge
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Abstract
A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
Claims17
1-2. (canceled)
The device as claimed in claim 6 further comprising a cap layer disposed on the additional CoFeB layer.
(canceled)
A synthetic antiferromagnetic (SAF) device, comprising:
- a reference layer having a first and second ruthenium (Ru) layer;
- a magnesium oxide (MgO) spacer layer disposed on the reference layer;
- a cobalt iron boron (CoFeB) layer disposed on the MgO spacer layer;
- a third Ru layer disposed on the CoFeB layer, the third Ru layer having a thickness of approximately 0 angstroms (Å) to 18 Å;
- and
- an additional CoFeB layer disposed on the third Ru layer,
- wherein the MgO spacer layer is magnetically coupled to the CoFeB layer, the first Ru layer and the CoFe layer after the device is subject to anneal temperatures of about 375° C. to 400° C.
(canceled)
The device as claimed in claim 18 wherein the first Ru layer is approximately 10 Å.
The device as claimed in claim 18 wherein the second Ru layer is approximately 21 Å.
15-17. (canceled)
A synthetic antiferromagnetic (SAF) device, comprising:
- a reference layer having a first ruthenium (Ru) layer and a second Ru layer;
- a spacer layer disposed on the reference layer;
- a storage layer disposed on the spacer layer, the storage layer including an additional Ru layer having a thickness of approximately 0 angstroms (Å) to 18 Å;
- a cap layer disposed on the storage layer;
- a cobalt iron boron (CoFeB) layer disposed on the spacer layer;
- a third Ru layer disposed on the CoFeB layer;
- and
- an additional CoFeB layer disposed on the third Ru layer.
A synthetic antiferromagnetic (SAF) device, comprising:
- a substrate;
- a first tantalum (Ta) layer disposed on the substrate;
- a first ruthenium (Ru) layer disposed on the first Ta layer, the first Ru layer having a thickness of approximately 10 angstroms (Å);
- a cobalt iron (CoFe) layer disposed on the first Ru layer;
- a second Ru layer disposed on the CoFe layer, the second Ru layer having a thickness of approximately 21 Å;
- a first cobalt iron boron (CoFeB) layer disposed on the second Ru layer;
- a magnesium oxide (MgO) spacer layer disposed on the first CoFeB layer;
- a second CoFeB layer disposed on the MgO spacer layer;
- a third Ru layer disposed on the second CoFeB layer, the third Ru layer having a thickness of approximately 18 Å;
- a third CoFeB layer disposed on the third Ru layer;
- a cap layer disposed on the third CoFeB layer;
- a bottom contact coupled to the substrate;
- and
- a top contact coupled to the cap layer.
Dependencies are inferred from the claim text.