Method for manufacturing semiconductor device

Abstract

According to an embodiment, a method for manufacturing a semiconductor device includes polishing a metal layer provided on a surface of a wafer, while supplying slurry to a polishing pad and spraying gas to the polishing pad. The slurry includes an inorganic particle, a resin particle, an oxidant for oxidizing the metal layer, a complexing agent for forming an organic complex on a surface of the metal layer, and a surfactant for forming a hydrophilic film on a surface of the organic complex. The resin particle includes a functional group on a surface, the functional group having a same kind of polarity as that of the inorganic particle. The resin particle contains polystyrene incorporated at a concentration of 0.001% by weight or more and 0.1% by weight or less, and has an average particle diameter of 200 nm or more and 1 μm or less.

Dependencies are inferred from the claim text.