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US 2014/0004717 A1Published application
Low-k dielectric damage repair by vapor-phase chemical exposure
AssigneeApplied Materials, Inc.
InventorsKelvin CHAN, Alexandros T. DEMOS
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Abstract
A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
Claims20
A method of repairing a damaged low-k dielectric layer comprising;
- exposing a porous low-k dielectric layer to a vinyl silane containing compound;
- and
- optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
A method of repairing a damaged low-k dielectric layer comprising;
- exposing a porous low-k dielectric layer to an oxidizing compound;
- exposing the porous low-k dielectric layer to a silylation agent;
- and
- optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
1 more element
Dependencies are inferred from the claim text.